SiC power devices reach buyers as four lines — Schottky diodes, MOSFETs, power modules and bare die — and this category is finished silicon rather than raw material, so what decides acceptance is qualification and traceability, not powder chemistry. The devices are sourced directly from a Chinese SiC specialist IDM that runs its own wafer fab, not a contract-branding house; because the die is made on that line rather than at an unnamed foundry, a lot number can be traced back through the process when a part fails. The first thing to settle on any device is that voltage and current do not identify it: a part rated "1200V 40A" can be a single die or two 30 A dies paralleled in one package, and its qualification grade — consumer, industrial or automotive — sets the test regime and the manufacturer's obligation to notify you of a process change. Grades are stated as they actually run: Schottky diodes are all industrial, modules are all automotive and built to order.
These devices are built on 4H-SiC wafers; the move to larger substrates behind the supply is covered in the 6-to-8-inch wafer transition.
| Line | Voltage | Rating | Package |
|---|---|---|---|
| SiC Schottky diode | 650V · 1200V | 4–40 A; 1200V dual configuration available | TO-247-2/-3, TO-220-2, TO-220F-2, TO-252-2, DFN5×6 |
| SiC MOSFET | 650V · 750V · 800V · 1200V | Rds(on) 12–700 mΩ | TO-247-3/-4, TO-263-7, TO-252-3, TO-220F-3 |
| SiC power module | 1200V | Rds(on) 1.58–2.6 mΩ | HPD, Mini HPD (built to order) |
| SiC bare die | 650V – 1200V | Diode 4–40 A, MOSFET 12–700 mΩ | Die level |