SiC Schottky and MOSFET chips supplied before packaging, for buyers who do their own assembly. The die is diced from the same 4H-SiC wafers as the packaged parts, and covers both device types across the 650–1200V diode range and the 12–700 mΩ MOSFET range. This is a chip-level part that is hard to source in Korea, so it is handled per enquiry rather than from a standing list — die availability, known-good-die criteria and the acceptance basis are confirmed case by case before a lot is committed.
Grades
| SKU | Grade | Typical | Application |
|---|---|---|---|
| NTS-DIE-SBD | Diode die | 650V–1200V, 4–40 A coverage | Buyers packaging in house |
| NTS-DIE-MOS | MOSFET die | Rds(on) 12–700 mΩ coverage | Buyers packaging in house |
The die-by-die list — voltage, current or Rds(on) class, and available die sizes — is not published and is sent on enquiry.
What we verify
- Whether the die comes from an in-house fab or a foundry, and if a foundry, which one and where packaging is done
- Reliability qualification grade and AEC-Q101 status
- Process change notification (PCN) policy and last-time-buy (LTB) window
- 8D handling — NTS works the failure directly with the manufacturer's quality department